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| SMD Type Silicon NPN Epitaxial Planar Type 2SD1979 Transistors IC Features Low on resistance ron. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 20 25 300 500 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Base-emitter voltage Collector-base cutoff current Collector-emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCEO VBE ICBO ICEO hFE Testconditons IC = 1 mA, IB = 0 VCE = 2 V, IC = 4 mA VCB = 50 V, IE = 0 VEB = 25 V, IC = 0 VCE = 2 V, IC = 4 mA 500 Min 20 0.6 1 1 2500 0.1 80 4.5 V MHz pF Typ Max Unit V V iA iA VCE(sat) IC = 30 mA, IB = 3 mA fT Cob VCB = 6 V, IE = -4 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz ON resistance Ron 1 U hFE Classification Marking Rank hFE S 500 1500 3W T 800 2500 www.kexin.com.cn 1 |
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